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Tunable Terahertz Plasmonic Sensor Based on Graphene/Insulator Stacks | IEEE Journals & Magazine | IEEE Xplore

Tunable Terahertz Plasmonic Sensor Based on Graphene/Insulator Stacks

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Otto configuration based THz SPR sensing system using GIS: n_{p,}\,n_{s}, and n_{o} are refractive index of the prism, sample, and substrate; k_{0} is wavevector...
Impact Statement:We proposed a graphene/insulator stacks based THz plasmonic sensor using a prism-coupling attenuated total reflection configuration. Angular interrogation technique was u...Show More

Abstract:

We propose a layer-by-layer graphene/insulator stacks based terahertz plasmonic sensor of refractive index of testing samples using a prism-coupling attenuated total refl...Show More
Impact Statement:
We proposed a graphene/insulator stacks based THz plasmonic sensor using a prism-coupling attenuated total reflection configuration. Angular interrogation technique was used to explore the performance of the sensor. The effective detection accuracy (DA) of sensor can be improved through high doping levels or with multilayer graphene. The maximum DA is 7.14 degree-1 for N = 5 at EF = 1.6 eV; The maximum sensitivity is 51.0 degree/RIU along with a FOM up to 12.75 RIU-1 for N = 1 at EF = 1.0 eV.

Abstract:

We propose a layer-by-layer graphene/insulator stacks based terahertz plasmonic sensor of refractive index of testing samples using a prism-coupling attenuated total reflection configuration. An angular interrogation technique has been used to explore the performance of the sensor in terms of detecting accuracy, sensitivity, and figure of merit (FOM). From the analysis of theoretical resonance angle of the sensor and the finite element method (FEM) based simulation, we reveal that the number of graphene layer (N), the Fermi level energy (E F ) of graphene, and refractive index of testing samples have a great effect on these performance parameters. The simulated results show that more layers of graphene will result in higher detection accuracy but lower sensitivity and FOM. The effective detection accuracy can be improved through high doping levels or with multilayer graphene. The maximum detection accuracy is 7.14 degree-1 for N = 5 at EF = 1.6eV. The maximum sensitivity is 51.0°/RIU, along with a FOM up to 12.75 RIU-1 for N = 1 at EF = 1.0eV.
Otto configuration based THz SPR sensing system using GIS: n_{p,}\,n_{s}, and n_{o} are refractive index of the prism, sample, and substrate; k_{0} is wavevector...
Published in: IEEE Photonics Journal ( Volume: 9, Issue: 1, February 2017)
Article Sequence Number: 5900210
Date of Publication: 20 January 2017

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