A Doherty Power Amplifier Design Method for Improved Efficiency and Linearity | IEEE Journals & Magazine | IEEE Xplore

A Doherty Power Amplifier Design Method for Improved Efficiency and Linearity


Abstract:

A novel Doherty power amplifier (PA) design method enabling high efficiency and high linearity simultaneously is proposed. The output combiner network is treated as a bla...Show More

Abstract:

A novel Doherty power amplifier (PA) design method enabling high efficiency and high linearity simultaneously is proposed. The output combiner network is treated as a black box, and its parameters, together with the input phase delay, are solved based on given transistor characteristics and design requirements. This opens for new PA solutions with nonconventional Doherty behavior. The increased design space enables new tradeoffs in Doherty PA designs, including solutions with both high efficiency and high linearity simultaneously. A method utilizing the new design space is developed. For verification, a 20-W 2.14-GHz symmetrical gallium nitride high electron mobility transistors Doherty PA is fabricated and measured. The PA obtains an average power added efficiency of 40% and an adjacent power leakage ratio of -41 dBc without any linearization for an 8.6-dB peak to average power ratio 10-MHz-long term evolution signal, at an average output power of 35.5 dBm.
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 64, Issue: 12, December 2016)
Page(s): 4491 - 4504
Date of Publication: 31 October 2016

ISSN Information:

Funding Agency:

Author image of William Hallberg
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
William Hallberg (S’13) received the B.Sc. degree in engineering physics and the M.Sc. degree in electrical engineering from the Chalmers University of Technology, Gothenburg, Sweden, in 2012 and 2014, respectively, where he is currently pursuing the Ph.D. degree
In 2014, he joined the Microwave Electronics Laboratory, Chalmers University of Technology. His current research interests include highly efficient and linear pow...Show More
William Hallberg (S’13) received the B.Sc. degree in engineering physics and the M.Sc. degree in electrical engineering from the Chalmers University of Technology, Gothenburg, Sweden, in 2012 and 2014, respectively, where he is currently pursuing the Ph.D. degree
In 2014, he joined the Microwave Electronics Laboratory, Chalmers University of Technology. His current research interests include highly efficient and linear pow...View more
Author image of Mustafa Özen
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA, USA
Mustafa Özen (S’10–M’14) received the B.Sc. degree in electrical engineering from Ankara University, Ankara, Turkey, in 2006, and the M.Sc. degree in microwave engineering and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2010 and 2014, respectively.
He is currently a Joint Post-Doctoral Researcher with the Chalmers University of Technology and the University of California at San Diego...Show More
Mustafa Özen (S’10–M’14) received the B.Sc. degree in electrical engineering from Ankara University, Ankara, Turkey, in 2006, and the M.Sc. degree in microwave engineering and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2010 and 2014, respectively.
He is currently a Joint Post-Doctoral Researcher with the Chalmers University of Technology and the University of California at San Diego...View more
Author image of David Gustafsson
Ericsson AB, Gothenburg, Sweden
David Gustafsson received the M.Sc. degree in engineering physics and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2009 and 2014, respectively.
In 2014, he joined Ericsson Research, Gothenburg, where he is currently involved in gallium nitride monolithic microwave integrated circuits and millimeter-wave 5G front-ends.
Dr. Gustafsson was a recipient of the 2013 IEEE Microwave Theory and...Show More
David Gustafsson received the M.Sc. degree in engineering physics and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2009 and 2014, respectively.
In 2014, he joined Ericsson Research, Gothenburg, where he is currently involved in gallium nitride monolithic microwave integrated circuits and millimeter-wave 5G front-ends.
Dr. Gustafsson was a recipient of the 2013 IEEE Microwave Theory and...View more
Author image of Koen Buisman
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Koen Buisman (S’05–M’09) received the M.Sc. and Ph.D. degrees in microelectronics from the Delft University of Technology, Delft, The Netherlands, in 2004 and 2011, respectively.
From 2004 to 2014, he was with the Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology. In 2014, he joined the Chalmers University of Technology, Gothenburg, Sweden, where he is currently an Assistant Professor with...Show More
Koen Buisman (S’05–M’09) received the M.Sc. and Ph.D. degrees in microelectronics from the Delft University of Technology, Delft, The Netherlands, in 2004 and 2011, respectively.
From 2004 to 2014, he was with the Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology. In 2014, he joined the Chalmers University of Technology, Gothenburg, Sweden, where he is currently an Assistant Professor with...View more
Author image of Christian Fager
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Christian Fager (S’98–M’03–SM’15) received the M.Sc. and Ph.D. degrees in electrical engineering and microwave electronics from the Chalmers University of Technology, Gothenburg, Sweden, in 1998 and 2003, respectively.
He is currently a Professor with the Microwave Electronics Laboratory, Chalmers University of Technology. He has authored or co-authored over 100 papers in international journals and conferences. His current...Show More
Christian Fager (S’98–M’03–SM’15) received the M.Sc. and Ph.D. degrees in electrical engineering and microwave electronics from the Chalmers University of Technology, Gothenburg, Sweden, in 1998 and 2003, respectively.
He is currently a Professor with the Microwave Electronics Laboratory, Chalmers University of Technology. He has authored or co-authored over 100 papers in international journals and conferences. His current...View more

Author image of William Hallberg
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
William Hallberg (S’13) received the B.Sc. degree in engineering physics and the M.Sc. degree in electrical engineering from the Chalmers University of Technology, Gothenburg, Sweden, in 2012 and 2014, respectively, where he is currently pursuing the Ph.D. degree
In 2014, he joined the Microwave Electronics Laboratory, Chalmers University of Technology. His current research interests include highly efficient and linear power amplifiers.
William Hallberg (S’13) received the B.Sc. degree in engineering physics and the M.Sc. degree in electrical engineering from the Chalmers University of Technology, Gothenburg, Sweden, in 2012 and 2014, respectively, where he is currently pursuing the Ph.D. degree
In 2014, he joined the Microwave Electronics Laboratory, Chalmers University of Technology. His current research interests include highly efficient and linear power amplifiers.View more
Author image of Mustafa Özen
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA, USA
Mustafa Özen (S’10–M’14) received the B.Sc. degree in electrical engineering from Ankara University, Ankara, Turkey, in 2006, and the M.Sc. degree in microwave engineering and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2010 and 2014, respectively.
He is currently a Joint Post-Doctoral Researcher with the Chalmers University of Technology and the University of California at San Diego, San Diego, CA, USA. His current research interests include high efficiency power amplifier architectures, linearization, and the design of millimeter-wave SiGe/Si front-ends.
Dr. Özen was a recipient of the 2011 Best Paper Award of the IEEE Wireless and Microwave Technology Conference and the International Post-Doctoral Fellowship from the Swedish Research Council in 2016.
Mustafa Özen (S’10–M’14) received the B.Sc. degree in electrical engineering from Ankara University, Ankara, Turkey, in 2006, and the M.Sc. degree in microwave engineering and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2010 and 2014, respectively.
He is currently a Joint Post-Doctoral Researcher with the Chalmers University of Technology and the University of California at San Diego, San Diego, CA, USA. His current research interests include high efficiency power amplifier architectures, linearization, and the design of millimeter-wave SiGe/Si front-ends.
Dr. Özen was a recipient of the 2011 Best Paper Award of the IEEE Wireless and Microwave Technology Conference and the International Post-Doctoral Fellowship from the Swedish Research Council in 2016.View more
Author image of David Gustafsson
Ericsson AB, Gothenburg, Sweden
David Gustafsson received the M.Sc. degree in engineering physics and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2009 and 2014, respectively.
In 2014, he joined Ericsson Research, Gothenburg, where he is currently involved in gallium nitride monolithic microwave integrated circuits and millimeter-wave 5G front-ends.
Dr. Gustafsson was a recipient of the 2013 IEEE Microwave Theory and Techniques Society Graduate Fellowship.
David Gustafsson received the M.Sc. degree in engineering physics and the Ph.D. degree from the Chalmers University of Technology, Gothenburg, Sweden, in 2009 and 2014, respectively.
In 2014, he joined Ericsson Research, Gothenburg, where he is currently involved in gallium nitride monolithic microwave integrated circuits and millimeter-wave 5G front-ends.
Dr. Gustafsson was a recipient of the 2013 IEEE Microwave Theory and Techniques Society Graduate Fellowship.View more
Author image of Koen Buisman
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Koen Buisman (S’05–M’09) received the M.Sc. and Ph.D. degrees in microelectronics from the Delft University of Technology, Delft, The Netherlands, in 2004 and 2011, respectively.
From 2004 to 2014, he was with the Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology. In 2014, he joined the Chalmers University of Technology, Gothenburg, Sweden, where he is currently an Assistant Professor with the Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience. He has authored or co-authored over 45 refereed journal and conference papers. He holds two patents. His current research interests include varactors for RF adaptivity, nonlinear device characterization, and technology optimization for wireless systems.
Koen Buisman (S’05–M’09) received the M.Sc. and Ph.D. degrees in microelectronics from the Delft University of Technology, Delft, The Netherlands, in 2004 and 2011, respectively.
From 2004 to 2014, he was with the Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology. In 2014, he joined the Chalmers University of Technology, Gothenburg, Sweden, where he is currently an Assistant Professor with the Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience. He has authored or co-authored over 45 refereed journal and conference papers. He holds two patents. His current research interests include varactors for RF adaptivity, nonlinear device characterization, and technology optimization for wireless systems.View more
Author image of Christian Fager
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
Christian Fager (S’98–M’03–SM’15) received the M.Sc. and Ph.D. degrees in electrical engineering and microwave electronics from the Chalmers University of Technology, Gothenburg, Sweden, in 1998 and 2003, respectively.
He is currently a Professor with the Microwave Electronics Laboratory, Chalmers University of Technology. He has authored or co-authored over 100 papers in international journals and conferences. His current research interests include the design and modeling of linear and energy efficient transmitters for future wireless systems.
Dr. Fager was a recipient of the Best Student Paper Award at the IEEE MTT-S International Microwave Symposium in 2002. He is currently an Associate Editor for IEEE Microwave Magazine.
Christian Fager (S’98–M’03–SM’15) received the M.Sc. and Ph.D. degrees in electrical engineering and microwave electronics from the Chalmers University of Technology, Gothenburg, Sweden, in 1998 and 2003, respectively.
He is currently a Professor with the Microwave Electronics Laboratory, Chalmers University of Technology. He has authored or co-authored over 100 papers in international journals and conferences. His current research interests include the design and modeling of linear and energy efficient transmitters for future wireless systems.
Dr. Fager was a recipient of the Best Student Paper Award at the IEEE MTT-S International Microwave Symposium in 2002. He is currently an Associate Editor for IEEE Microwave Magazine.View more
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