TGV versus TSV: A comparative analysis

In this paper, glass and silicon are explored as substrate materials. Glass-based substrates have many attributes that make them attractive for semiconductor manufacturing processes. Based on our simulation results, through glass via (TGV) is expected to significantly improve the performance of 3D-ICs as it provides lower parasitics than through silicon via (TSV). TGV can be used to build a spiral inductor. Compared to TSV, TSV-based spiral inductor achieves quality factor more than 23 at 5 GHz, while TGV-based spiral inductor achieves quality factor more than 34 at 5 GHz with the same dimensions. Moreover, a bandpass filter is built using TGV. The EM simulation results show that the proposed filter has an insertion loss of 0.5 dB at 90 GHz and 20 GHz passband from 80 to 100 GHz compared to 1.5 dB insertion loss in case of TSV.