Abstract:
The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to i...Show MoreMetadata
Abstract:
The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.
Published in: 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Date of Conference: 06-08 July 2016
Date Added to IEEE Xplore: 18 August 2016
ISBN Information:
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