Contents 1. Introduction
Recently, resistive random access memory (RRAM) is one of the most promising candidates as the next generation nonvolatile random access memory device. RRAM have many inherent advantages such as lower cost, simple structures, nonvolatile switching, fast switching speed, low operating voltage and low power consumption [1]–[3]. ZnO is one of the best materials for RRAM application because it possesses wide energy bandgap, good stability, lower cost and easy to obtain. In the past decade, a lot of research reports had successfully achieved excellent characteristics by using sputter system to prepare ZnO thin film and fabricate Pt/ZnO/Pt RRAM [4]–[5]. In this work, we demonstrated a simple and low-cost process to improve the device characteristic by introducing UV-Ozone treatment [6].
