Abstract:
A comprehensive analysis of the LDMOSFET for base station power amplifiers is presented in this paper, mainly focusing on the effect of key device parameters on breakdown...Show MoreMetadata
Abstract:
A comprehensive analysis of the LDMOSFET for base station power amplifiers is presented in this paper, mainly focusing on the effect of key device parameters on breakdown voltage and on-resistance. The improved performance due to an LDMOS structure with a p-buried layer is studied.
Published in: 2015 IEEE 11th International Conference on ASIC (ASICON)
Date of Conference: 03-06 November 2015
Date Added to IEEE Xplore: 21 July 2016
ISBN Information:
Electronic ISSN: 2162-755X
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