Characterization FinFET device layout dependent effect

Layout-dependent effects (LDE) have been extensively studied previously on planar device, but the understanding on FinFET devices is limited. In this work, Fin number effect, contact to gate space effect, dummy gate number effect and Fin space effect of different processes are presented and analyzed. For Fin number split test-key, we found for a higher Fin number, a slower device IDSAT; also, single and two Fins device WAT variation is very large, and physical data shows that the Fin dimension of single and two Fins structure is obviously larger than for multi-Fin structure. The larger Fin dimension results in a weaker gate control and worse short channel effect control. For Fin space split, no obviously trend devices without epitaxial source/drain, but IDSAT variation and performance are a little better for larger space test-key with epitaxial source/drain. Dummy gate number split: no obviously impact on device universal curve for device without epitaxial; but IDSAT variation is better for more dummy gate test-key for device with epitaxial source/drain. Our result showed that the FinFET device is much sensitive to contact to gate space. Contact to gate overlay and CD control is very critical to avoid contact to gate bridging.