Abstract:
Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO2 was ...Show MoreMetadata
Abstract:
Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO2 was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N2O/H2 was also varied from 5Å to 10Å. The threshold voltage (Vth) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.
Published in: 2014 Silicon Nanoelectronics Workshop (SNW)
Date of Conference: 08-09 June 2014
Date Added to IEEE Xplore: 07 December 2015
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