Performance prospect of graphene barristor with high on-off ratio (∼107)

The graphene barristor is a promising device enabling high on-off ratio switching over 10⁵ using a graphene FET. In this work, a semi-empirical device model for the graphene barristor has been developed using the physical parameters extracted from the graphene barristors fabricated on a lightly doped silicon substrate. Then, the ultimate performance limit and benefits of barristors were explored by varying the device parameters. The barristor showed a promising performance, but the scalability requires a creative solution for the device structure to maximize the current injection area.

I. Introduction

Small on-off ratio due to zero bandgap has been known as the major drawback of graphene for logic device applications. Thus, extensive researches have been performed to open a bandgap, but the bandgap could only be increased by sacrificing the mobility or increasing the device complexity.