Abstract:
This paper presents a computationally efficient Raychowdhury compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). In order to ach...Show MoreMetadata
Abstract:
This paper presents a computationally efficient Raychowdhury compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). In order to achieve an accurate compact model, shot noise sources is added. Then, for the assessment of the SB on circuit performances, an operational amplifier (Op-Amp) is designed using the SB-CNTFET compact model, and results are compared with a conventional CNTFET.
Date of Conference: 16-19 March 2015
Date Added to IEEE Xplore: 07 December 2015
Electronic ISBN:978-1-4799-1758-7
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Schottky Barrier ,
- Noise Sources ,
- Field-effect Transistors ,
- Shot Noise ,
- Circuit Performance ,
- Compact Model ,
- Palladium ,
- Thermal Noise ,
- Circuit Design ,
- Conduction Band Minimum ,
- Fermi Dirac ,
- Oxide Thickness ,
- Drain Current ,
- Noise Analysis ,
- Phase Margin ,
- Result Of Noise ,
- Tunneling Current ,
- Schottky Barrier Height ,
- Unity Gain ,
- Common-mode Rejection Ratio
- Author Keywords
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Schottky Barrier ,
- Noise Sources ,
- Field-effect Transistors ,
- Shot Noise ,
- Circuit Performance ,
- Compact Model ,
- Palladium ,
- Thermal Noise ,
- Circuit Design ,
- Conduction Band Minimum ,
- Fermi Dirac ,
- Oxide Thickness ,
- Drain Current ,
- Noise Analysis ,
- Phase Margin ,
- Result Of Noise ,
- Tunneling Current ,
- Schottky Barrier Height ,
- Unity Gain ,
- Common-mode Rejection Ratio
- Author Keywords
