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Integration of Magnetoresistive Sensors With Atomic Force Microscopy Cantilevers for Scanning Magnetoresistance Microscopy Applications | IEEE Journals & Magazine | IEEE Xplore

Integration of Magnetoresistive Sensors With Atomic Force Microscopy Cantilevers for Scanning Magnetoresistance Microscopy Applications


Abstract:

This paper reports on the development and the fabrication of a novel atomic force microscopy cantilever with integrated magnetoresistive sensors at its tip for scanning m...Show More

Abstract:

This paper reports on the development and the fabrication of a novel atomic force microscopy cantilever with integrated magnetoresistive sensors at its tip for scanning magnetoresistance applications. A 2-D scan over an area of 100 × 100 μm2 simultaneously generates topographic and magnetic maps with a spatial resolution better than 1 μm. The magnetic field is detected using two spin valve sensors with a field sensitivity of 61.33 μV/Oe. The device operation is demonstrated with a ferromagnetic test feature of 1 × 20 μm2. The results demonstrate that this scanning technique is capable of accurately quantifying the absolute magnitude of magnetic stray fields.
Published in: IEEE Transactions on Magnetics ( Volume: 51, Issue: 11, November 2015)
Article Sequence Number: 6503104
Date of Publication: 23 June 2015

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