Abstract:
The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi/sub 2/ ...Show MoreMetadata
Abstract:
The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi/sub 2/ formation significantly. On the other hand, tensile stress presented in the silicon substrate was found to promote the formation of TiSi/sub 2/. In addition, the TiSi/sub 2/ film thickness was found to decrease and increase with the compressive and tensile stress levels, respectively. The results indicated that compressive stress hinders Si migration through the Ti-Si interface so that the formation of TiSi/sub 2/ films is retarded. In contrast, tensile stress promotes Si diffusion to facilitate TiSi/sub 2/ formation.
Published in: Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102)
Date of Conference: 03-03 June 1998
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-4285-2
