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Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters | IEEE Journals & Magazine | IEEE Xplore

Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters


Abstract:

In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves...Show More

Abstract:

In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (Lmax) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm2/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2- 10 THz .
Published in: IEEE Transactions on Terahertz Science and Technology ( Volume: 5, Issue: 2, March 2015)
Page(s): 244 - 250
Date of Publication: 02 February 2015

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