Abstract:
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by m...Show MoreMetadata
Abstract:
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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Istituto Nazionale di Fisica Nucleare Sezione di Trieste, Trieste, Friuli-Venezia Giulia, IT
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
Istituto Nazionale di Fisica Nucleare Sezione di Trieste, Trieste, Friuli-Venezia Giulia, IT
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy
E. De Castro Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy