Abstract:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be s...Show MoreMetadata
Abstract:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the k-p data at high VDS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low VDS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
ISBN Information:
ISSN Information:
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Potential Profile ,
- Tunnel Field-effect Transistors ,
- Charge Density ,
- Solution Of Equation ,
- Transverse Direction ,
- Poisson Equation ,
- Numerical Solution Of Equation ,
- Equilibrium Density ,
- Saturation Regime ,
- Drain Contacts ,
- Band Gap ,
- Voltage-gated ,
- Conduction Band ,
- Surface Potential ,
- Nanowires ,
- Valence Band ,
- Heterostructures ,
- Fermi Level ,
- Radial Direction ,
- Displacement Vector ,
- Source Contacts ,
- Longitudinal Coordinate ,
- Charged Channel ,
- CMOS Technology ,
- Fermi Dirac ,
- Space Charge ,
- Electron Affinity ,
- Depletion Region ,
- Large Cross-section
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Potential Profile ,
- Tunnel Field-effect Transistors ,
- Charge Density ,
- Solution Of Equation ,
- Transverse Direction ,
- Poisson Equation ,
- Numerical Solution Of Equation ,
- Equilibrium Density ,
- Saturation Regime ,
- Drain Contacts ,
- Band Gap ,
- Voltage-gated ,
- Conduction Band ,
- Surface Potential ,
- Nanowires ,
- Valence Band ,
- Heterostructures ,
- Fermi Level ,
- Radial Direction ,
- Displacement Vector ,
- Source Contacts ,
- Longitudinal Coordinate ,
- Charged Channel ,
- CMOS Technology ,
- Fermi Dirac ,
- Space Charge ,
- Electron Affinity ,
- Depletion Region ,
- Large Cross-section