Abstract:
The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time....Show MoreMetadata
Abstract:
The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics Id(Vg) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to ≈30% of static variability sources.
Date of Conference: 22-26 September 2014
Date Added to IEEE Xplore: 06 November 2014
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STMicroelectronics, Crolles, France
INPG, MINATEC, Grenoble, France
STMicroelectronics, Crolles, France
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece
INPG, MINATEC, Grenoble, France
STMicroelectronics, Crolles, France
INPG, MINATEC, Grenoble, France
STMicroelectronics, Crolles, France
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece
INPG, MINATEC, Grenoble, France