Abstract:
We present a study of lateral silicon p-i-n light-emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallo...Show MoreMetadata
Abstract:
We present a study of lateral silicon p-i-n light-emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well-chosen p-i-n architecture.
Date of Conference: 16-20 September 2013
Date Added to IEEE Xplore: 22 May 2014
Electronic ISBN:978-1-4799-0649-9
ISSN Information:
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Delft, The Netherlands
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Delft, The Netherlands
Contents MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Delft, The Netherlands
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Delft, The Netherlands
