Relation between surface concentration and average conductivity in diffused layers in germanium

In this paper an expression is derived for calculating the average conductivity of a diffused layer in semiconductor material as a function of the surface concentration of the diffused impurity and the background impurity concentration. Curves are presented depicting the relationship among these parameters for the case of germanium. Included are curves for both diffused impurity types for the complementary error function, gaussian, exponential and linear impurity distributions.