Loading web-font TeX/Math/Italic
A Fast - Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics | IEEE Journals & Magazine | IEEE Xplore

A Fast I{-}V Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics


Abstract:

Semiconductor manufacturing economics necessitate the development of novel and innovative techniques that can replace the traditional time consuming reliability methods, ...Show More

Abstract:

Semiconductor manufacturing economics necessitate the development of novel and innovative techniques that can replace the traditional time consuming reliability methods, i.e., the constant voltage stress time-dependent dielectric breakdown (CVS-TDDB) tests. We show that positive charge trapping is a dominant process when ultra-thick oxides are stressed through the ramped voltage test. Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields. It will be demonstrated, based on experimental data, that our proposed technique can be a suitable replacement for the CVS-TDDB as a quality screening tool.
Published in: IEEE Electron Device Letters ( Volume: 35, Issue: 1, January 2014)
Page(s): 117 - 119
Date of Publication: 11 December 2013

ISSN Information:


References

References is not available for this document.