Abstract:
Critical DRC spacing rules for high-voltage signals and the use of thin oxides for low-power applications leave ICs vulnerable to electrical overstress and other reliabil...Show MoreMetadata
Abstract:
Critical DRC spacing rules for high-voltage signals and the use of thin oxides for low-power applications leave ICs vulnerable to electrical overstress and other reliability issues, which may lead to oxide breakdown. New verification techniques provide diagnostic insight into reliability issues due to oxide breakdown, and identify opportunities for design improvements.
Date of Conference: 10-12 September 2013
Date Added to IEEE Xplore: 21 October 2013
Electronic ISBN:978-1-58537-232-4
Print ISSN: 0739-5159
Conference Location: Las Vegas, NV, USA