Abstract:
Thin silicon die (100 um or less) are required for a number of applications, including stacked die packages and three-dimensional integrated circuits (3D-IC). The wafer t...Show MoreMetadata
Abstract:
Thin silicon die (100 um or less) are required for a number of applications, including stacked die packages and three-dimensional integrated circuits (3D-IC). The wafer thinning process is conceptually simple, but requires optimization of the backside finish and dicing to ensure high die strength. High die strength is required to minimize yield loss during assembly and to ensure high reliability during device operation. In this paper, we describe process optimization for thin wafers and thin die, and how these processes affect the fracture strength of silicon.
Published in: Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Date of Conference: 15-19 July 2013
Date Added to IEEE Xplore: 16 September 2013
ISBN Information: