A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs

A new technique is proposed for mobility evaluation to overcome the shortcomings of conventional techniques. By measuring Id and Cgc simultaneously within 3 μs, it removes adverse impact of Vd on mobility, avoids cable-switching, and minimizes charge trapping. Furthermore, it can work on highly `leaky' devices without special RF structure. It is shown that mobility can be extracted with gate leakage current density as high as 40 A/cm². The sources of error are then systematically analyzed. This technique can be easily implemented in Keithley 4200 semiconductor analyzer with two 4225-PMUs and therefore it can serve as a simple and robust tool for accurate mobility exaction for material selection during technology development.