Low noise high frequency CNTFET amplifier

This paper focuses on performance challenges related to Mos-based systems operating on high frequency ranges. One solution for this issue is to use carbon nanotube transistor (CNTFET) because of their promising performances. Therefore, to improve the device performance at high frequency ranges, designers must reduce the parasitic capacitances by using an array of parallel nanotubes as the transistor channel. This work presents the simulation of low noise amplifier using CNTFET technology. At 165GHz, the LNA simulation results show a power gain of 16dB, a noise figure of 0.25dB and very low power consumption equal to 0.47mW.