Abstract:
This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree's SiC MOSFETs. This work includes information regarding the body diode...Show MoreMetadata
Abstract:
This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree's SiC MOSFETs. This work includes information regarding the body diode characteristics, reverse I-V characteristics for various values of positive and negative gate bias, and the need for antiparallel diodes.
Published in: 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Date of Conference: 17-21 March 2013
Date Added to IEEE Xplore: 27 May 2013
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