A novel method for accurate measurement and decoupling of SRAM standby leakage

A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I_sub), gate leakage (I_gate) and junction leakage (I_junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random variations. The front-end SRAM array layout is kept original to preserve actual physical environment. The method is verified in SMIC 65nm technology. The data of I_sub, I_gate and I_junc of pull-down (PD), pull-up (PU) and pass-gate (PG) transistor are collected for process optimization to reduce standby power.