Abstract:
Power semiconductors-diodes, thyristors, insulated gate bipolar transistors (IGBTs) and GTOs-are key components in pulsed power applications in the SUBT/FP-EC sections of...Show MoreMetadata
Abstract:
Power semiconductors-diodes, thyristors, insulated gate bipolar transistors (IGBTs) and GTOs-are key components in pulsed power applications in the SUBT/FP-EC sections of CERN. This paper mentions these types of semiconductor devices available today and mentions future developments. Since the subject is very large, the physics of the devices are not be discussed in detail but more attention is paid to an overview concerning the device properties and applications in the pulse power circuits at CERN.
Published in: IEE Colloquium on Pulsed Power '97 (Digest No: 1997/075)
Date of Conference: 19-19 March 1997
Date Added to IEEE Xplore: 06 August 2002
