RIE nitrogen plasma-induced structural changes in thin SiO/sub 2/ layers

Reactive Ion Etching (RIE) damage effects on thin (13 nm) thermal SiO/sub 2/ on Si have been studied using X-ray photoelectron spectroscopy. It is found that 5 min exposure of the oxide to N/sub 2/ plasma operating in RIE-mode causes structural modifications which manifest only as a deterioration of the oxide quality but without actual nitridation of the oxide. The presence of a small (<10%) constant amount of SiO species through the oxide and a broadening of Si-SiO/sub 2/ interface transition region are detected as consequences from the RIE process.