Abstract:
Emerging nonvolatile memory with an oxide–semiconductor-based thin-film transistor (TFT) using indium-gallium-zinc-oxide (IGZO) was developed. The memory is called nonvol...Show MoreMetadata
Abstract:
Emerging nonvolatile memory with an oxide–semiconductor-based thin-film transistor (TFT) using indium-gallium-zinc-oxide (IGZO) was developed. The memory is called nonvolatile oxide–semiconductor random access memory (NOSRAM). The memory cell of the NOSRAM (NOSRAM cell) consists of an IGZO TFT for data writing, a normal Si-based p-channel metal-oxide-semiconductor (PMOS) for data reading, and a cell capacitor for storing charge and controlling the PMOS gate voltage. The IGZO TFT and the cell capacitor are formed over the PMOS. Owing to extremely low-leakage-current characteristics of the IGZO TFT, the charge stored in the 2-fF cell capacitor is maintained for a long time. This long data retention realized innovative nonvolatile memory. The NOSRAM cell fabricated with the 0.8-\mu m process technology demonstrated an on/off ratio of 10^{7} and an endurance over 10^{12} write cycles. In addition, NOSRAM with a memory capacity of 1 Mb was fabricated; the cell size was 12.32 \mu{\hbox {m}}^{2} and the cell array size was 13.5 {\hbox {mm}}^{2} . The 1-Mb NOSRAM achieved basic operation at 4.5 V or less, write operation at 150 ns/page, read distribution of data “1” with 3\sigma=\hbox{ 0.10~V}, and a data retention over 60 days at 85^{\circ}\hbox{C}.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 47, Issue: 9, September 2012)
TFT Circuit Design Division, Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Hiroki Inoue received the Associate degree in electrical engineering from Ariake National College of Technology, Fukuoka, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.
Hiroki Inoue received the Associate degree in electrical engineering from Ariake National College of Technology, Fukuoka, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takanori Matsuzaki received the B.E. and M.E. degrees in electrical engineering from Tokyo University of Science, Tokyo, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 2003, where he has been working on the development of LSI circuits and memories.
Takanori Matsuzaki received the B.E. and M.E. degrees in electrical engineering from Tokyo University of Science, Tokyo, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 2003, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Shuhei Nagatsuka received the B.E. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.
Shuhei Nagatsuka received the B.E. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Yutaka Okazaki received the B.S. degree in science and M.S. degree in science and engineering from Nagoya Institute of Technology, Nagoya, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2003, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.
Yutaka Okazaki received the B.S. degree in science and M.S. degree in science and engineering from Nagoya Institute of Technology, Nagoya, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2003, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Toshinari Sasaki received the B.S. and M.S. degrees from Waseda University, Tokyo, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan in 2005, where he has been engaged in the development of process technology of oxide–semiconductor-based TFTs.
Toshinari Sasaki received the B.S. and M.S. degrees from Waseda University, Tokyo, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan in 2005, where he has been engaged in the development of process technology of oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Kousei Noda received the B.E. and M.E. degrees from Kyushu Institute of Technology, Kitakyushu, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2005, where he has been working on the development of process technology of Si-based transistors.
Kousei Noda received the B.E. and M.E. degrees from Kyushu Institute of Technology, Kitakyushu, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2005, where he has been working on the development of process technology of Si-based transistors.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Daisuke Matsubayashi received the B.S. degree from Keio University, Kanagawa, Japan, in 2005, and the M.S. and Ph.D. degrees from the University of Tokyo, Tokyo, Japan, in 2007 and 2010, respectively, all in physics.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been engaged in the development of LSI circuits using oxide–semiconductor-based TFTs.
Daisuke Matsubayashi received the B.S. degree from Keio University, Kanagawa, Japan, in 2005, and the M.S. and Ph.D. degrees from the University of Tokyo, Tokyo, Japan, in 2007 and 2010, respectively, all in physics.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been engaged in the development of LSI circuits using oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takahiko Ishizu received the B.E. and M.E. degrees in engineering from Osaka Prefecture University, Osaka, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan in 2010, where he has been working on the development of LSI circuits and memories.
Takahiko Ishizu received the B.E. and M.E. degrees in engineering from Osaka Prefecture University, Osaka, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan in 2010, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Tatsuya Onuki received the B.S. and M.S. degrees from University of Tsukuba, Tsukuba, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been working on the development of LSI circuits and memories.
Tatsuya Onuki received the B.S. and M.S. degrees from University of Tsukuba, Tsukuba, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Atsuo Isobe received the B.E. and M.E. degrees from Nagoya Institute of Technology, Nagoya, Japan, in 1996 and 1998, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1998, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.
Atsuo Isobe received the B.E. and M.E. degrees from Nagoya Institute of Technology, Nagoya, Japan, in 1996 and 1998, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1998, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Yutaka Shionoiri received the B.E. and M.E. degrees from Chiba University, Chiba, Japan, in 1994 and 1996, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1996, where he has been working on the development of LSI circuits and memories.
Yutaka Shionoiri received the B.E. and M.E. degrees from Chiba University, Chiba, Japan, in 1994 and 1996, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1996, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Kiyoshi Kato received the B.S., M.S., and Ph.D. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1994, 1996, and 1999, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 1999, where he has been working on the development of LSI circuits using TFTs.
Kiyoshi Kato received the B.S., M.S., and Ph.D. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1994, 1996, and 1999, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 1999, where he has been working on the development of LSI circuits using TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takashi Okuda received the B.S. and M.S. degrees in instrumentation engineering from Keio University, Kanagawa, Japan.
He was engaged in the development of various large-scale MOS memories from 1975 to 2008 with NEC Corporation and mainly directed the development of prototype 64 Mb-4 Gb DRAMs. He is now a technical adviser to Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Takashi Okuda received the B.S. and M.S. degrees in instrumentation engineering from Keio University, Kanagawa, Japan.
He was engaged in the development of various large-scale MOS memories from 1975 to 2008 with NEC Corporation and mainly directed the development of prototype 64 Mb-4 Gb DRAMs. He is now a technical adviser to Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Jun Koyama received the B.S. degree in physics from Rikkyo University, Ikebukuro, Japan, in 1980.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1992. Since then, he has been working on the development of thin-film transistors and circuits.
Jun Koyama received the B.S. degree in physics from Rikkyo University, Ikebukuro, Japan, in 1980.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1992. Since then, he has been working on the development of thin-film transistors and circuits.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Shunpei Yamazaki (LF'11) received the B.E., M.E., Ph.D., and honorary degrees from Doshisha University, Japan, in 1965, 1967, 1971, and 2011 respectively.
He is the Founder and President of Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Dr. Yamazaki is a Life Fellow of the IEEE, a member of the Japan Society of Applied Physics, and a foreign member of the Royal Swedish Academy of Engineering Sciences. He was awar...Show More
Shunpei Yamazaki (LF'11) received the B.E., M.E., Ph.D., and honorary degrees from Doshisha University, Japan, in 1965, 1967, 1971, and 2011 respectively.
He is the Founder and President of Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Dr. Yamazaki is a Life Fellow of the IEEE, a member of the Japan Society of Applied Physics, and a foreign member of the Royal Swedish Academy of Engineering Sciences. He was awar...View more
Contents TFT Circuit Design Division, Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Hiroki Inoue received the Associate degree in electrical engineering from Ariake National College of Technology, Fukuoka, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.
Hiroki Inoue received the Associate degree in electrical engineering from Ariake National College of Technology, Fukuoka, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takanori Matsuzaki received the B.E. and M.E. degrees in electrical engineering from Tokyo University of Science, Tokyo, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 2003, where he has been working on the development of LSI circuits and memories.
Takanori Matsuzaki received the B.E. and M.E. degrees in electrical engineering from Tokyo University of Science, Tokyo, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 2003, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Shuhei Nagatsuka received the B.E. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.
Shuhei Nagatsuka received the B.E. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 2004.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2004, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Yutaka Okazaki received the B.S. degree in science and M.S. degree in science and engineering from Nagoya Institute of Technology, Nagoya, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2003, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.
Yutaka Okazaki received the B.S. degree in science and M.S. degree in science and engineering from Nagoya Institute of Technology, Nagoya, Japan, in 2001 and 2003, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2003, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Toshinari Sasaki received the B.S. and M.S. degrees from Waseda University, Tokyo, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan in 2005, where he has been engaged in the development of process technology of oxide–semiconductor-based TFTs.
Toshinari Sasaki received the B.S. and M.S. degrees from Waseda University, Tokyo, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan in 2005, where he has been engaged in the development of process technology of oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Kousei Noda received the B.E. and M.E. degrees from Kyushu Institute of Technology, Kitakyushu, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2005, where he has been working on the development of process technology of Si-based transistors.
Kousei Noda received the B.E. and M.E. degrees from Kyushu Institute of Technology, Kitakyushu, Japan, in 2003 and 2005, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2005, where he has been working on the development of process technology of Si-based transistors.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Daisuke Matsubayashi received the B.S. degree from Keio University, Kanagawa, Japan, in 2005, and the M.S. and Ph.D. degrees from the University of Tokyo, Tokyo, Japan, in 2007 and 2010, respectively, all in physics.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been engaged in the development of LSI circuits using oxide–semiconductor-based TFTs.
Daisuke Matsubayashi received the B.S. degree from Keio University, Kanagawa, Japan, in 2005, and the M.S. and Ph.D. degrees from the University of Tokyo, Tokyo, Japan, in 2007 and 2010, respectively, all in physics.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been engaged in the development of LSI circuits using oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takahiko Ishizu received the B.E. and M.E. degrees in engineering from Osaka Prefecture University, Osaka, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan in 2010, where he has been working on the development of LSI circuits and memories.
Takahiko Ishizu received the B.E. and M.E. degrees in engineering from Osaka Prefecture University, Osaka, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan in 2010, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Tatsuya Onuki received the B.S. and M.S. degrees from University of Tsukuba, Tsukuba, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been working on the development of LSI circuits and memories.
Tatsuya Onuki received the B.S. and M.S. degrees from University of Tsukuba, Tsukuba, Japan, in 2008 and 2010, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 2010, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Atsuo Isobe received the B.E. and M.E. degrees from Nagoya Institute of Technology, Nagoya, Japan, in 1996 and 1998, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1998, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.
Atsuo Isobe received the B.E. and M.E. degrees from Nagoya Institute of Technology, Nagoya, Japan, in 1996 and 1998, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1998, where he has been engaged in the development of process technology of Si-based transistors and oxide–semiconductor-based TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Yutaka Shionoiri received the B.E. and M.E. degrees from Chiba University, Chiba, Japan, in 1994 and 1996, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1996, where he has been working on the development of LSI circuits and memories.
Yutaka Shionoiri received the B.E. and M.E. degrees from Chiba University, Chiba, Japan, in 1994 and 1996, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1996, where he has been working on the development of LSI circuits and memories.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Kiyoshi Kato received the B.S., M.S., and Ph.D. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1994, 1996, and 1999, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 1999, where he has been working on the development of LSI circuits using TFTs.
Kiyoshi Kato received the B.S., M.S., and Ph.D. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1994, 1996, and 1999, respectively.
He joined Semiconductor Energy Laboratory Co., Ltd, Atsugi, Japan, in 1999, where he has been working on the development of LSI circuits using TFTs.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Takashi Okuda received the B.S. and M.S. degrees in instrumentation engineering from Keio University, Kanagawa, Japan.
He was engaged in the development of various large-scale MOS memories from 1975 to 2008 with NEC Corporation and mainly directed the development of prototype 64 Mb-4 Gb DRAMs. He is now a technical adviser to Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Takashi Okuda received the B.S. and M.S. degrees in instrumentation engineering from Keio University, Kanagawa, Japan.
He was engaged in the development of various large-scale MOS memories from 1975 to 2008 with NEC Corporation and mainly directed the development of prototype 64 Mb-4 Gb DRAMs. He is now a technical adviser to Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Jun Koyama received the B.S. degree in physics from Rikkyo University, Ikebukuro, Japan, in 1980.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1992. Since then, he has been working on the development of thin-film transistors and circuits.
Jun Koyama received the B.S. degree in physics from Rikkyo University, Ikebukuro, Japan, in 1980.
He joined Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan, in 1992. Since then, he has been working on the development of thin-film transistors and circuits.View more
Semiconductor Energy Laboratory Company Limited, Kanagawa, Japan
Shunpei Yamazaki (LF'11) received the B.E., M.E., Ph.D., and honorary degrees from Doshisha University, Japan, in 1965, 1967, 1971, and 2011 respectively.
He is the Founder and President of Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Dr. Yamazaki is a Life Fellow of the IEEE, a member of the Japan Society of Applied Physics, and a foreign member of the Royal Swedish Academy of Engineering Sciences. He was awarded Medal with Purple Ribbon by the Japanese Prime Minister's Office for the innovation of MOS LSI element technology in 1997 and was the winner of the Okochi Memorial Technology Prize in 2010. He is a holder of Guinness World Record under the category of “most patents held by an individual” for the total of 6314 patents as of March 2011.
Shunpei Yamazaki (LF'11) received the B.E., M.E., Ph.D., and honorary degrees from Doshisha University, Japan, in 1965, 1967, 1971, and 2011 respectively.
He is the Founder and President of Semiconductor Energy Laboratory Co., Ltd., Atsugi, Japan.
Dr. Yamazaki is a Life Fellow of the IEEE, a member of the Japan Society of Applied Physics, and a foreign member of the Royal Swedish Academy of Engineering Sciences. He was awarded Medal with Purple Ribbon by the Japanese Prime Minister's Office for the innovation of MOS LSI element technology in 1997 and was the winner of the Okochi Memorial Technology Prize in 2010. He is a holder of Guinness World Record under the category of “most patents held by an individual” for the total of 6314 patents as of March 2011.View more
