Abstract:
A compact model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP ...Show MoreMetadata
Abstract:
A compact model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language to interface with Spectre circuit simulator within Cadence CAD system. The results are validated against experimental measurements of high-k dielectric structure.
Published in: Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2012
Date of Conference: 24-26 May 2012
Date Added to IEEE Xplore: 28 June 2012
ISBN Information:
Conference Location: Warsaw, Poland
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