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Study on Device Matrix Array structure for MOSFET gm variability evaluation | IEEE Conference Publication | IEEE Xplore

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Study on Device Matrix Array structure for MOSFET gm variability evaluation

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Kazuo Terada; Ryo Takeda; Katsuhiro Tsuji; Takaaki Tsunomura; Akio Nishida; Tohru Mogami
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Abstract:

The effect of Device Matrix Array structure on MOSFET gm-variability measurement is studied. One of the two transfer gates, which are connected to an MOSFET source termin...Show More

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Abstract:

The effect of Device Matrix Array structure on MOSFET gm-variability measurement is studied. One of the two transfer gates, which are connected to an MOSFET source terminal for both Kelvin measurement and addressable access, is removed. This modification enables us to measure and to reduce the effect of the metal wiring resistance on Kelvin measurement, and thus to estimate the intrinsic MOSFET gm-variability.
Published in: 2012 IEEE International Conference on Microelectronic Test Structures
Date of Conference: 19-22 March 2012
Date Added to IEEE Xplore: 26 April 2012
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ISSN Information:

DOI: 10.1109/ICMTS.2012.6190621
Conference Location: San Diego, CA, USA
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