Abstract:
In this work, we investigate the formation of mini-band energy in triple Si quantum wells-based resonance tunnelling diode focusing on the effect of applied bias on the b...Show MoreMetadata
Abstract:
In this work, we investigate the formation of mini-band energy in triple Si quantum wells-based resonance tunnelling diode focusing on the effect of applied bias on the band. The formation of mini-bands is obtained from the calculation of electron tunnelling probability through the wells. The calculation is done based on transfer matrix method. The simulation results show the mini-band formation due to the appearance of discrete energy group. The changes of applied bias, quantum well width and barrier thickness causes the change of the mini-band width. These results indicate that the device structure and applied bias condition play a key role on the formation of mini-band energy in the quantum wells.
Published in: TENCON 2011 - 2011 IEEE Region 10 Conference
Date of Conference: 21-24 November 2011
Date Added to IEEE Xplore: 12 January 2012
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Faculty of Engineering, University of Indonesia, Depok, Indonesia
Faculty of Engineering, University of Lampung, Bandar Lampung, Indonesia
Center of Material Technology, Agency for Assessment and Application of Technology (BPPT), Jakarta, Indonesia
Faculty of Engineering, University of Indonesia, Depok, Indonesia
Contents Faculty of Engineering, University of Indonesia, Depok, Indonesia
Faculty of Engineering, University of Lampung, Bandar Lampung, Indonesia
Center of Material Technology, Agency for Assessment and Application of Technology (BPPT), Jakarta, Indonesia
Faculty of Engineering, University of Indonesia, Depok, Indonesia
