Abstract:
A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz FT and 270 GHz FMAX. The HBT devices are described in detail along with several other...Show MoreMetadata
Abstract:
A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz FT and 270 GHz FMAX. The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000 8" wafers. Additional mm-wave enablement devices offered in the process include MOS varactors, P-I-N diodes and sub-10fF MIM capacitors. Additional key metrics for the SiGe HBT device include an NFMIN of 2dB at 40GHz, a BVCEO of 1.6V and a DC current gain of 1200.
Published in: 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Date of Conference: 09-11 October 2011
Date Added to IEEE Xplore: 17 November 2011
ISBN Information:
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