Abstract:
An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-perfo...Show MoreMetadata
Abstract:
An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.
Published in: 2011 IEEE Custom Integrated Circuits Conference (CICC)
Date of Conference: 19-21 September 2011
Date Added to IEEE Xplore: 20 October 2011
ISBN Information:
ISSN Information:
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Mobile App ,
- 28-nm Technology ,
- Optimization Process ,
- Mobile Technology ,
- High Performance ,
- Smartphone ,
- Mobile Devices ,
- Competitive Performance ,
- Threshold Voltage ,
- Supply Voltage ,
- Low Leakage ,
- Gate Dielectric ,
- Gate Length ,
- Transistor Performance ,
- Flicker Noise ,
- Gate Leakage ,
- Reduction In Leakage ,
- Gate Stack
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Mobile App ,
- 28-nm Technology ,
- Optimization Process ,
- Mobile Technology ,
- High Performance ,
- Smartphone ,
- Mobile Devices ,
- Competitive Performance ,
- Threshold Voltage ,
- Supply Voltage ,
- Low Leakage ,
- Gate Dielectric ,
- Gate Length ,
- Transistor Performance ,
- Flicker Noise ,
- Gate Leakage ,
- Reduction In Leakage ,
- Gate Stack
