Abstract:
Analog circuit designs are often biased to work in sub-threshold mode for low power constraints and for better gate-source voltage matching performances. Depending on pro...Show MoreMetadata
Abstract:
Analog circuit designs are often biased to work in sub-threshold mode for low power constraints and for better gate-source voltage matching performances. Depending on process, hump effect may change MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. Actually, even without body effect, hump mainly degrades MOS matching performances in the sub-threshold area with significant temperature dependence. Thus, in order to accurately simulate bandgap performances, modeling of hump effect has to be considered.
Date of Conference: 15-18 May 2011
Date Added to IEEE Xplore: 04 July 2011
ISBN Information:
ISSN Information:
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Low Bandgap ,
- Hump Effect ,
- Matching Performance ,
- Analog Circuits ,
- Gate-source Voltage ,
- Parasite ,
- Silicon ,
- Temporal Variation ,
- Solid Line ,
- Monte Carlo Simulation ,
- Low Voltage ,
- Supply Voltage ,
- Edge Devices ,
- Circuit Level ,
- Model Mismatch ,
- Differential Pair ,
- Low Threshold Voltage ,
- Low Supply Voltage
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Low Bandgap ,
- Hump Effect ,
- Matching Performance ,
- Analog Circuits ,
- Gate-source Voltage ,
- Parasite ,
- Silicon ,
- Temporal Variation ,
- Solid Line ,
- Monte Carlo Simulation ,
- Low Voltage ,
- Supply Voltage ,
- Edge Devices ,
- Circuit Level ,
- Model Mismatch ,
- Differential Pair ,
- Low Threshold Voltage ,
- Low Supply Voltage
