Abstract:
This paper identifies and investigates a new source of random threshold voltage variation, which is referred to as Grain-Orientation-induced Quantum Confinement (GOQC) in...Show MoreMetadata
Abstract:
This paper identifies and investigates a new source of random threshold voltage variation, which is referred to as Grain-Orientation-induced Quantum Confinement (GOQC) in emerging ultra-thin-body metal-gate complementary metal-oxide-semiconductor (CMOS) devices including FinFET, tri-gate, and nanowire field-effect transistors. Due to the dependence of the work function of the metal gates on their grain orientations, different parts of the gate in multigate CMOS devices can have different work functions, resulting in a high electric field in the channel (body) of these devices and, hence, in electrical confinement of the carriers. GOQC effect is shown to be the dominant source of the quantum threshold voltage variation in all emerging ultra-thin multi-gate devices including FinFETs. It is also highlighted for the first time that such variations can have significant implications for the performance and reliability of minimum-sized digital circuits such as static random-access memory cells.
Published in: IEEE Transactions on Electron Devices ( Volume: 58, Issue: 8, August 2011)
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Seid Hadi Rasouli (S'07) received both the B.S. and M.S. degrees in electrical engineering from the University of Tehran, Tehran, Iran, in 2001 and 2004, respectively. He is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), Santa Barbara
From 2004 to 2006, he was a Research Assistant and a VLSI Laboratory Instructor with the U...Show More
Seid Hadi Rasouli (S'07) received both the B.S. and M.S. degrees in electrical engineering from the University of Tehran, Tehran, Iran, in 2001 and 2004, respectively. He is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), Santa Barbara
From 2004 to 2006, he was a Research Assistant and a VLSI Laboratory Instructor with the U...View more
National Institute for Advanced Industrial Science and Technology, Tsukuba, Japan
Kazuhiko Endo (M'99) received the Ph.D. degree in electrical engineering from Waseda University, Tokyo, Japan, in 1999.
From 1993 to 2003, he was with Silicon Systems Research Laboratories, NEC Corporation, Otsu, Japan, where he worked on research and development of multilevel interconnects and high-k gate stack technologies for ultra-large-scale integration. From August 1999 to August 2000, he was a Visiting Scholar wit...Show More
Kazuhiko Endo (M'99) received the Ph.D. degree in electrical engineering from Waseda University, Tokyo, Japan, in 1999.
From 1993 to 2003, he was with Silicon Systems Research Laboratories, NEC Corporation, Otsu, Japan, where he worked on research and development of multilevel interconnects and high-k gate stack technologies for ultra-large-scale integration. From August 1999 to August 2000, he was a Visiting Scholar wit...View more
Nanoelectronics Research Laboratory, Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
Jone F. Chen (S'93–M'98) received the B.S. degree from the National Cheng Kung University, Tainan, Taiwan, in 1990 and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1995 and 1998, respectively, all in electrical engineering.
Since 1999, he has been with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, where he is currently a Professor. He ...Show More
Jone F. Chen (S'93–M'98) received the B.S. degree from the National Cheng Kung University, Tainan, Taiwan, in 1990 and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1995 and 1998, respectively, all in electrical engineering.
Since 1999, he has been with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, where he is currently a Professor. He ...View more
Institute of Microelectronics (IME), Agency for Science, Technology and Research (ASTAR), Singapore
Navab Singh (M'06–SM'09) received the M.Tech. degree in solid-state materials from Indian Ins-titute of Technology Delhi, New Delhi, India, in 1995 and the Ph.D. degree in electrical and computer engineering from the National University of Singapore, Singapore, in 2008.
After working for five years in the semiconductor industry in the area of lithography process technology, in July 2001, he joined the Institute of Microele...Show More
Navab Singh (M'06–SM'09) received the M.Tech. degree in solid-state materials from Indian Ins-titute of Technology Delhi, New Delhi, India, in 1995 and the Ph.D. degree in electrical and computer engineering from the National University of Singapore, Singapore, in 2008.
After working for five years in the semiconductor industry in the area of lithography process technology, in July 2001, he joined the Institute of Microele...View more
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Kaustav Banerjee (S'92–M'99–SM'03) received the Ph.D. degree in electrical engineering and computer sciences from the University of California, Berkeley, in 1999.
In July 2002, he joined the faculty of the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), where he has been a Full Professor since 2007. At UCSB, he directs the Nanoelectronics Research Laboratory and is an affi...Show More
Kaustav Banerjee (S'92–M'99–SM'03) received the Ph.D. degree in electrical engineering and computer sciences from the University of California, Berkeley, in 1999.
In July 2002, he joined the faculty of the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), where he has been a Full Professor since 2007. At UCSB, he directs the Nanoelectronics Research Laboratory and is an affi...View more
Contents Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Seid Hadi Rasouli (S'07) received both the B.S. and M.S. degrees in electrical engineering from the University of Tehran, Tehran, Iran, in 2001 and 2004, respectively. He is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), Santa Barbara
From 2004 to 2006, he was a Research Assistant and a VLSI Laboratory Instructor with the University of Tehran. He is with the Nanoelectronics Research Laboratory, with Prof. K. Banerjee, USCB. His current research interests include technology-circuit interactions in the design of low-power and robust digital integrated circuits using emerging technologies.
Seid Hadi Rasouli (S'07) received both the B.S. and M.S. degrees in electrical engineering from the University of Tehran, Tehran, Iran, in 2001 and 2004, respectively. He is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), Santa Barbara
From 2004 to 2006, he was a Research Assistant and a VLSI Laboratory Instructor with the University of Tehran. He is with the Nanoelectronics Research Laboratory, with Prof. K. Banerjee, USCB. His current research interests include technology-circuit interactions in the design of low-power and robust digital integrated circuits using emerging technologies.View more
National Institute for Advanced Industrial Science and Technology, Tsukuba, Japan
Kazuhiko Endo (M'99) received the Ph.D. degree in electrical engineering from Waseda University, Tokyo, Japan, in 1999.
From 1993 to 2003, he was with Silicon Systems Research Laboratories, NEC Corporation, Otsu, Japan, where he worked on research and development of multilevel interconnects and high-k gate stack technologies for ultra-large-scale integration. From August 1999 to August 2000, he was a Visiting Scholar with the Center for Integrated Systems, Stanford University, Stanford, CA. He is currently a Senior Researcher with the Silicon Nanoscale Devices Group, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan. His research interests include nanometer-scale manufacturing for aggressively scaled multigate devices in advanced very large scale integration technologies.
Dr. Endo is a member of the IEEE Electron Devices Society and the Japan Society of Applied Physics. He was the recipient of the Best Paper Award at the 2003 Advanced Metallization Conference and at the 1998 Meeting of Japan Society of Applied Physics.
Kazuhiko Endo (M'99) received the Ph.D. degree in electrical engineering from Waseda University, Tokyo, Japan, in 1999.
From 1993 to 2003, he was with Silicon Systems Research Laboratories, NEC Corporation, Otsu, Japan, where he worked on research and development of multilevel interconnects and high-k gate stack technologies for ultra-large-scale integration. From August 1999 to August 2000, he was a Visiting Scholar with the Center for Integrated Systems, Stanford University, Stanford, CA. He is currently a Senior Researcher with the Silicon Nanoscale Devices Group, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan. His research interests include nanometer-scale manufacturing for aggressively scaled multigate devices in advanced very large scale integration technologies.
Dr. Endo is a member of the IEEE Electron Devices Society and the Japan Society of Applied Physics. He was the recipient of the Best Paper Award at the 2003 Advanced Metallization Conference and at the 1998 Meeting of Japan Society of Applied Physics.View more
Nanoelectronics Research Laboratory, Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
Jone F. Chen (S'93–M'98) received the B.S. degree from the National Cheng Kung University, Tainan, Taiwan, in 1990 and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1995 and 1998, respectively, all in electrical engineering.
Since 1999, he has been with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, where he is currently a Professor. He is also currently a Visiting Professor with the Nanoelectronics Research Laboratory, Department of Electrical and Computer Engineering, University of California, Santa Barbara. His research interests include the reliability of deep-submicrometer and high-voltage metal–oxide–semiconductor devices.
Jone F. Chen (S'93–M'98) received the B.S. degree from the National Cheng Kung University, Tainan, Taiwan, in 1990 and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1995 and 1998, respectively, all in electrical engineering.
Since 1999, he has been with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, where he is currently a Professor. He is also currently a Visiting Professor with the Nanoelectronics Research Laboratory, Department of Electrical and Computer Engineering, University of California, Santa Barbara. His research interests include the reliability of deep-submicrometer and high-voltage metal–oxide–semiconductor devices.View more
Institute of Microelectronics (IME), Agency for Science, Technology and Research (ASTAR), Singapore
Navab Singh (M'06–SM'09) received the M.Tech. degree in solid-state materials from Indian Ins-titute of Technology Delhi, New Delhi, India, in 1995 and the Ph.D. degree in electrical and computer engineering from the National University of Singapore, Singapore, in 2008.
After working for five years in the semiconductor industry in the area of lithography process technology, in July 2001, he joined the Institute of Microelectronics (IME), Agency for Science, Technology and Research (A ∗STAR), Singapore. He is currently the Head with the Department of Postgraduate Research, IME, A∗STAR. He is the author or coauthor of more than 150 technical papers in archival journals and refereed conferences. His research interests include semiconductor nanowire technology and devices for green electronics and clean energy including storage, embedded memory devices, and nanoelectromechanical switch relays. His nanowire device papers have been selected for preconference publicity by conferences including the IEEE International Electron Devices Meeting and the International Conference on Solid-State Devices and Materials.
Dr. Singh was a recipient of the IEEE Electron Devices Society George E. Smith Award in 2007; the Singapore National Technology Award in 2008 for his outstanding contributions to the research and development of nanowire technology platform, enabling the realization of ultimately scaled complementary metal–oxide–semiconductor integrated circuits and a new class of electronic biosensors; and the A ∗STAR TALENT award 2010 for leading, educating, and nurturing talents.
Navab Singh (M'06–SM'09) received the M.Tech. degree in solid-state materials from Indian Ins-titute of Technology Delhi, New Delhi, India, in 1995 and the Ph.D. degree in electrical and computer engineering from the National University of Singapore, Singapore, in 2008.
After working for five years in the semiconductor industry in the area of lithography process technology, in July 2001, he joined the Institute of Microelectronics (IME), Agency for Science, Technology and Research (A ∗STAR), Singapore. He is currently the Head with the Department of Postgraduate Research, IME, A∗STAR. He is the author or coauthor of more than 150 technical papers in archival journals and refereed conferences. His research interests include semiconductor nanowire technology and devices for green electronics and clean energy including storage, embedded memory devices, and nanoelectromechanical switch relays. His nanowire device papers have been selected for preconference publicity by conferences including the IEEE International Electron Devices Meeting and the International Conference on Solid-State Devices and Materials.
Dr. Singh was a recipient of the IEEE Electron Devices Society George E. Smith Award in 2007; the Singapore National Technology Award in 2008 for his outstanding contributions to the research and development of nanowire technology platform, enabling the realization of ultimately scaled complementary metal–oxide–semiconductor integrated circuits and a new class of electronic biosensors; and the A ∗STAR TALENT award 2010 for leading, educating, and nurturing talents.View more
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
Kaustav Banerjee (S'92–M'99–SM'03) received the Ph.D. degree in electrical engineering and computer sciences from the University of California, Berkeley, in 1999.
In July 2002, he joined the faculty of the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), where he has been a Full Professor since 2007. At UCSB, he directs the Nanoelectronics Research Laboratory and is an affiliated Faculty with the California NanoSystems Institute and the Institute for Energy Efficiency. Prior to joining UCSB, he was a Research Associate with the Center for Integrated Systems, Stanford University, Stanford, CA, from 1999 to 2001. He has also held a number of summer/Visiting positions at Texas Instruments, Dallas, from 1993 to 1997; École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, in 2001; and the Circuits Research Laboratories, Intel Corporation, Hillsboro, OR, in 2002. In December 2010, he held a Visiting Professorship at the Tokyo Institute of Technology, Tokyo, Japan. His research is chronicled in more than 220 journal articles, international conference proceeding papers, and book chapters, including more than 50 invited papers. He is also a Co-Editor of the book Emerging Nanoelectronics: Life With and After CMOS (Springer-Verlag, 2004). His technical ideas and innovations have seen widespread proliferation in both the industry and academia, as exemplified by his h-index of 36 as of April 2011. He has made a number of seminal contributions in the area of nanoscale integrated circuit (IC) interconnects and innovative interconnect solutions, including 3-D ICs and carbon-based interconnects, which have helped shape the semiconductor industry's R&D efforts in those areas. His research interests include nanometer-scale issues in very large scale integration (VLSI), as well as circuits and systems issues in emerging nanoelectronics. He is currently involved in exploring the physics, technology, and applications of carbon nanomaterials for next-generation electronics, as well as energy harvesting and storage.
Dr. Banerjee has delivered more than 100 keynote/panel speeches, tutorials, and invited talks at major international forums and academic/research institutes around the world. He has served on the technical and organizational committees of several leading IEEE and Association for Computing Machinery conferences, including the IEEE International Electron Devices Meeting, International Reliability Physics Symposium, Design Automation Conference (DAC), International Conference on Computer-Aided Design, International Symposium on Quality Electronic Design, and International Conference on Simulation of Semiconductor Processes and Devices. From 2005 to 2008, he served as a member of the Nanotechnology Committee of the IEEE Electron Devices Society (EDS). He currently serves on the IEEE/EDS VLSI Technology and Circuits Committee. He was the recipient of the Best Paper Award at the Design Automation Conference in 2001, the Association of Computing Machinery Special Interest Group on Design Automation Outstanding New Faculty Award in 2004, the IEEE Micro Top Picks Award in 2006, and an IBM Faculty Award in 2008. He has been a Distinguished Lecturer of the IEEE Electron Devices Society since 2008.
Kaustav Banerjee (S'92–M'99–SM'03) received the Ph.D. degree in electrical engineering and computer sciences from the University of California, Berkeley, in 1999.
In July 2002, he joined the faculty of the Department of Electrical and Computer Engineering, University of California, Santa Barbara (UCSB), where he has been a Full Professor since 2007. At UCSB, he directs the Nanoelectronics Research Laboratory and is an affiliated Faculty with the California NanoSystems Institute and the Institute for Energy Efficiency. Prior to joining UCSB, he was a Research Associate with the Center for Integrated Systems, Stanford University, Stanford, CA, from 1999 to 2001. He has also held a number of summer/Visiting positions at Texas Instruments, Dallas, from 1993 to 1997; École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, in 2001; and the Circuits Research Laboratories, Intel Corporation, Hillsboro, OR, in 2002. In December 2010, he held a Visiting Professorship at the Tokyo Institute of Technology, Tokyo, Japan. His research is chronicled in more than 220 journal articles, international conference proceeding papers, and book chapters, including more than 50 invited papers. He is also a Co-Editor of the book Emerging Nanoelectronics: Life With and After CMOS (Springer-Verlag, 2004). His technical ideas and innovations have seen widespread proliferation in both the industry and academia, as exemplified by his h-index of 36 as of April 2011. He has made a number of seminal contributions in the area of nanoscale integrated circuit (IC) interconnects and innovative interconnect solutions, including 3-D ICs and carbon-based interconnects, which have helped shape the semiconductor industry's R&D efforts in those areas. His research interests include nanometer-scale issues in very large scale integration (VLSI), as well as circuits and systems issues in emerging nanoelectronics. He is currently involved in exploring the physics, technology, and applications of carbon nanomaterials for next-generation electronics, as well as energy harvesting and storage.
Dr. Banerjee has delivered more than 100 keynote/panel speeches, tutorials, and invited talks at major international forums and academic/research institutes around the world. He has served on the technical and organizational committees of several leading IEEE and Association for Computing Machinery conferences, including the IEEE International Electron Devices Meeting, International Reliability Physics Symposium, Design Automation Conference (DAC), International Conference on Computer-Aided Design, International Symposium on Quality Electronic Design, and International Conference on Simulation of Semiconductor Processes and Devices. From 2005 to 2008, he served as a member of the Nanotechnology Committee of the IEEE Electron Devices Society (EDS). He currently serves on the IEEE/EDS VLSI Technology and Circuits Committee. He was the recipient of the Best Paper Award at the Design Automation Conference in 2001, the Association of Computing Machinery Special Interest Group on Design Automation Outstanding New Faculty Award in 2004, the IEEE Micro Top Picks Award in 2006, and an IBM Faculty Award in 2008. He has been a Distinguished Lecturer of the IEEE Electron Devices Society since 2008.View more
