Abstract:
This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on ...Show MoreMetadata
Abstract:
This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C) and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
Published in: IEEE Transactions on Industrial Electronics ( Volume: 58, Issue: 10, October 2011)
Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Vanessa Smet graduated from the Ecole Normale Superieure de Cachan, Cachan, France. She received the B.S. degree in applied physics from Paris XI University, Orsay Cedex, France, in 2004, and the M.S. degree in electrical engineering and the Ph.D. degree from the Montpellier University of Science (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214), Montpe...Show More
Vanessa Smet graduated from the Ecole Normale Superieure de Cachan, Cachan, France. She received the B.S. degree in applied physics from Paris XI University, Orsay Cedex, France, in 2004, and the M.S. degree in electrical engineering and the Ph.D. degree from the Montpellier University of Science (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214), Montpe...View more
Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Francois Forest (M'06) received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1982, and the Ph.D. degree from the University of Paris 6, Paris, France, in 1985.
From 1989 to 1999, he was a Professor with the Electrical Engineering Department, Ecole Normale Supérieure de Cachan. Since 1999, he has been a Professor with the Montpellier University of Science, M...Show More
Francois Forest (M'06) received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1982, and the Ph.D. degree from the University of Paris 6, Paris, France, in 1985.
From 1989 to 1999, he was a Professor with the Electrical Engineering Department, Ecole Normale Supérieure de Cachan. Since 1999, he has been a Professor with the Montpellier University of Science, M...View more
Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Jean-Jacques Huselstein received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1988, and the Ph.D. degree from the Montpellier University of Sciences, Montpellier, France, in 1993.
He is currently an Associate Professor with the Montpellier University of Sciences. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Ce...Show More
Jean-Jacques Huselstein received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1988, and the Ph.D. degree from the Montpellier University of Sciences, Montpellier, France, in 1993.
He is currently an Associate Professor with the Montpellier University of Sciences. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Ce...View more
Laboratoire Plasma et Conversion dEnergie, Institut National Polytechnique de Toulouse, Toulouse, France
Frédéric Richardeau received the M.Sc. and Agregation degrees in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1991 and 1992, respectively, and the Ph.D. degree in power electronics from the Institut National Polytechnique de Toulouse (INPT), Toulouse, France, in 1996.
He was a Lecturer and Researcher Assistant with the INPT from 1996 to 1997. He joined the Laboratoire d'Elect...Show More
Frédéric Richardeau received the M.Sc. and Agregation degrees in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1991 and 1992, respectively, and the Ph.D. degree in power electronics from the Institut National Polytechnique de Toulouse (INPT), Toulouse, France, in 1996.
He was a Lecturer and Researcher Assistant with the INPT from 1996 to 1997. He joined the Laboratoire d'Elect...View more
Laboratory of New Technology, Development and Networks, French Institute of Science and Technology for Transport, Versailles, France
Zoubir Khatir received the Dipl.Ing. degree in the physics of solids from the Institut National des Sciences Appliquées de Toulouse, Toulouse, France, in 1984, and the Ph.D. degree in electronics prepared in the Laboratoire d'Analyse et d'Architecture des Systèmes-Centre National de la Recherche Scientifique laboratory, Toulouse, in 1988.
Since 1988, he has been with the Laboratory of New Technology, French Institute of Sc...Show More
Zoubir Khatir received the Dipl.Ing. degree in the physics of solids from the Institut National des Sciences Appliquées de Toulouse, Toulouse, France, in 1984, and the Ph.D. degree in electronics prepared in the Laboratoire d'Analyse et d'Architecture des Systèmes-Centre National de la Recherche Scientifique laboratory, Toulouse, in 1988.
Since 1988, he has been with the Laboratory of New Technology, French Institute of Sc...View more
Systèmes et Applications des Technologies de lInformation et de lEnergie, Ecole Normale Supérieure de Cachan, Cachan, France
Stéphane Lefebvre received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1994.
He is currently a Professor with the Conservatoire National des Arts et Métiers, Paris, France, where he teaches power electronics. His research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre Natio...Show More
Stéphane Lefebvre received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1994.
He is currently a Professor with the Conservatoire National des Arts et Métiers, Paris, France, where he teaches power electronics. His research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre Natio...View more
University of Paris XII, Paris, France
Mounira Berkani received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan, France, in 2008.
She is currently an Associate Professor with the University of Paris XII, Paris, France. Her research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the ...Show More
Mounira Berkani received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan, France, in 2008.
She is currently an Associate Professor with the University of Paris XII, Paris, France. Her research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the ...View more
Contents Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Vanessa Smet graduated from the Ecole Normale Superieure de Cachan, Cachan, France. She received the B.S. degree in applied physics from Paris XI University, Orsay Cedex, France, in 2004, and the M.S. degree in electrical engineering and the Ph.D. degree from the Montpellier University of Science (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214), Montpellier, France, in 2007 and 2010, respectively.
She is currently a Postdoctoral Researcher with the Tyndall National Institute, University College Cork, Cork, Ireland. Her research interests include reliability of power semiconductor device, high-temperature packaging, and thermomechanical modeling.
Vanessa Smet graduated from the Ecole Normale Superieure de Cachan, Cachan, France. She received the B.S. degree in applied physics from Paris XI University, Orsay Cedex, France, in 2004, and the M.S. degree in electrical engineering and the Ph.D. degree from the Montpellier University of Science (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214), Montpellier, France, in 2007 and 2010, respectively.
She is currently a Postdoctoral Researcher with the Tyndall National Institute, University College Cork, Cork, Ireland. Her research interests include reliability of power semiconductor device, high-temperature packaging, and thermomechanical modeling.View more
Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Francois Forest (M'06) received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1982, and the Ph.D. degree from the University of Paris 6, Paris, France, in 1985.
From 1989 to 1999, he was a Professor with the Electrical Engineering Department, Ecole Normale Supérieure de Cachan. Since 1999, he has been a Professor with the Montpellier University of Science, Montpellier, France. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214) concern essentially parallel or series multilevel converters from low-power dc-to-dc stages to high-power pulsewidth-modulation inverters, power devices and converter reliability, and passive component modeling.
Francois Forest (M'06) received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1982, and the Ph.D. degree from the University of Paris 6, Paris, France, in 1985.
From 1989 to 1999, he was a Professor with the Electrical Engineering Department, Ecole Normale Supérieure de Cachan. Since 1999, he has been a Professor with the Montpellier University of Science, Montpellier, France. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214) concern essentially parallel or series multilevel converters from low-power dc-to-dc stages to high-power pulsewidth-modulation inverters, power devices and converter reliability, and passive component modeling.View more
Institut dElectronique du Sud, Université Montpellier 2, Montpellier, France
Jean-Jacques Huselstein received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1988, and the Ph.D. degree from the Montpellier University of Sciences, Montpellier, France, in 1993.
He is currently an Associate Professor with the Montpellier University of Sciences. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214) cover insulated-gate bipolar transistor converter reliability, direct ac–ac converters, and low-power direct-drive wind power génération.
Jean-Jacques Huselstein received the B.S. degree in electrical engineering from the Ecole Normale Superieure de Cachan, Cachan Cedex, France, in 1988, and the Ph.D. degree from the Montpellier University of Sciences, Montpellier, France, in 1993.
He is currently an Associate Professor with the Montpellier University of Sciences. His research activities (Institut d'Electronique du Sud laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 5214) cover insulated-gate bipolar transistor converter reliability, direct ac–ac converters, and low-power direct-drive wind power génération.View more
Laboratoire Plasma et Conversion dEnergie, Institut National Polytechnique de Toulouse, Toulouse, France
Frédéric Richardeau received the M.Sc. and Agregation degrees in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1991 and 1992, respectively, and the Ph.D. degree in power electronics from the Institut National Polytechnique de Toulouse (INPT), Toulouse, France, in 1996.
He was a Lecturer and Researcher Assistant with the INPT from 1996 to 1997. He joined the Laboratoire d'Electrotechnique et d'Electronique Industrielle, Toulouse, as a Centre National de la Recherche Scientifique (CNRS) Reseacher and a part-time Lecturer at the INPT, in 1997. He is currently the Head of the Static Converter Group with the Laboratoire Plasma et Conversion d'Energie at the Toulouse University and CNRS. His research interests include reliability and diagnosis of power devices, safety design and management, fault-tolerant converter, and multicell converter.
Frédéric Richardeau received the M.Sc. and Agregation degrees in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1991 and 1992, respectively, and the Ph.D. degree in power electronics from the Institut National Polytechnique de Toulouse (INPT), Toulouse, France, in 1996.
He was a Lecturer and Researcher Assistant with the INPT from 1996 to 1997. He joined the Laboratoire d'Electrotechnique et d'Electronique Industrielle, Toulouse, as a Centre National de la Recherche Scientifique (CNRS) Reseacher and a part-time Lecturer at the INPT, in 1997. He is currently the Head of the Static Converter Group with the Laboratoire Plasma et Conversion d'Energie at the Toulouse University and CNRS. His research interests include reliability and diagnosis of power devices, safety design and management, fault-tolerant converter, and multicell converter.View more
Laboratory of New Technology, Development and Networks, French Institute of Science and Technology for Transport, Versailles, France
Zoubir Khatir received the Dipl.Ing. degree in the physics of solids from the Institut National des Sciences Appliquées de Toulouse, Toulouse, France, in 1984, and the Ph.D. degree in electronics prepared in the Laboratoire d'Analyse et d'Architecture des Systèmes-Centre National de la Recherche Scientifique laboratory, Toulouse, in 1988.
Since 1988, he has been with the Laboratory of New Technology, French Institute of Science and Technology for Transport, Development and Networks, where he was in charge for high-power semiconductor device modeling and computer-aided design tool development. His actual research interests include the reliability in the high-temperature environment of high-power electronics in the field of transport applications.
Zoubir Khatir received the Dipl.Ing. degree in the physics of solids from the Institut National des Sciences Appliquées de Toulouse, Toulouse, France, in 1984, and the Ph.D. degree in electronics prepared in the Laboratoire d'Analyse et d'Architecture des Systèmes-Centre National de la Recherche Scientifique laboratory, Toulouse, in 1988.
Since 1988, he has been with the Laboratory of New Technology, French Institute of Science and Technology for Transport, Development and Networks, where he was in charge for high-power semiconductor device modeling and computer-aided design tool development. His actual research interests include the reliability in the high-temperature environment of high-power electronics in the field of transport applications.View more
Systèmes et Applications des Technologies de lInformation et de lEnergie, Ecole Normale Supérieure de Cachan, Cachan, France
Stéphane Lefebvre received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1994.
He is currently a Professor with the Conservatoire National des Arts et Métiers, Paris, France, where he teaches power electronics. His research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the test and the modeling of power semiconductor devices in hard working conditions and at high operating temperature.
Stéphane Lefebvre received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan Cedex, France, in 1994.
He is currently a Professor with the Conservatoire National des Arts et Métiers, Paris, France, where he teaches power electronics. His research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the test and the modeling of power semiconductor devices in hard working conditions and at high operating temperature.View more
University of Paris XII, Paris, France
Mounira Berkani received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan, France, in 2008.
She is currently an Associate Professor with the University of Paris XII, Paris, France. Her research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the behavior and reliability of power semiconductor devices under extreme operating conditions and high temperature.
Mounira Berkani received the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan, Cachan, France, in 2008.
She is currently an Associate Professor with the University of Paris XII, Paris, France. Her research interests (Systèmes et Applications des Technologies de l'Information et de l'Energie Laboratory, Unité Mixte de Recherche Centre National de la Recherche Scientifique 8029) include the behavior and reliability of power semiconductor devices under extreme operating conditions and high temperature.View more
