Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

In this work, we report high performance (I_on ~1 mA/μm at Ioff 100nA/μm @ 1V Vcc) short channel p-type SiGe/Si FinFETs combining high mobility, low T_inv (scaled High-k w/o Si cap), low R_sd, and process-induced strain. A dual channel scheme for high mobility CMOS FinFETs is demonstrated.