Strain Effect of the Dielectric Constant in Silicon Dioxide

The effect of mechanical stress on the dielectric constant of is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M₁₂. According to the measurements, the dielectric constant changes linearly with the stress. The value of is shown to be -(0.19 ± 0.01) × 10^-21 m²/V². The mechanism underlying the phenomena is discussed.