Trench structure metal-oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | IEEE Conference Publication | IEEE Xplore
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Trench structure metal-oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique

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Chih-Yao Wang; Jenn-Gwo Hwu
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Abstract:

This work presented the new trench structure of MOS solar cell with efficiency improved by the trap-assisted centers built on the side wall as the extra current path. The...Show More

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Abstract:

This work presented the new trench structure of MOS solar cell with efficiency improved by the trap-assisted centers built on the side wall as the extra current path. The perimeter of electrode is critical for MOS solar cell.
Published in: OECC 2010 Technical Digest
Date of Conference: 05-09 July 2010
Date Added to IEEE Xplore: 30 September 2010
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Conference Location: Sapporo, Japan
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