Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS

We have developed a high speed dynamic threshold voltage MOSFET named B-DTMOS for ultra low power operation. This was realized using a bulk wafer containing an individual trench isolated shallow-well with a high concentration buried layer sandwiched between two low concentration layers surrounded by a deep well. The B-DTMOS achieved an excellent propagation delay time of 83.6 psec at 0.6 V operation and 103.3 psec at 0.5 V operation. This was realized due to ultra low body resistance of the B-DTMOS.