Abstract:
We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modul...Show MoreMetadata
Abstract:
We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules. We perform thermal resistance measurements on these amplifiers using liquid-crystal thermography and show that they agree with theory and previously published measurements on GaN-on-diamond devices.
Published in: The 33rd International Convention MIPRO
Date of Conference: 24-28 May 2010
Date Added to IEEE Xplore: 29 July 2010
ISBN Information:
Conference Location: Opatija, Croatia
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