Abstract:
A 1/2.3-inch 10.3Mpixel 50 frame/s CMOS image sensor fabricated using a 0.13 ¿m 1P4M CMOS process with back-illumination technology achieves sensitivity of 9890e/luxs, ra...Show MoreMetadata
Abstract:
A 1/2.3-inch 10.3Mpixel 50 frame/s CMOS image sensor fabricated using a 0.13 ¿m 1P4M CMOS process with back-illumination technology achieves sensitivity of 9890e/luxs, random noise of 1.7e and saturation of 8850e. The sensor integrates a 10b/12b analog-to-digital converter, an internal PLL and a 10b serial LVDS interface to enable a data-rate up to 576 MHz.
Date of Conference: 07-11 February 2010
Date Added to IEEE Xplore: 18 March 2010
ISBN Information: