Floating Gate Flash Memories

This chapter contains sections titled:

• Introduction

• Basics of Program and Erase Operations

• Flash Memories with Channel Hot-Electron (CHE) Program and Tunnel Oxide Erase

• Flash Memories with Channel Hot-Electron Program and Poly-To-Poly Erase

• Flash Memories with Fowler-Nordheim Tunnel Program and Erase

• Special and Advanced Cell Structures

• Flash Reliability Issues

• Process Technology

• Memory Circuitry

• Flash Applications

• Conclusions and A Look into the Future

• Acknowledgments

This chapter contains sections titled:

• References