Germanium-source tunnel field effect transistors with record high ION/IOFF | IEEE Conference Publication | IEEE Xplore

Germanium-source tunnel field effect transistors with record high ION/IOFF


Abstract:

Tunnel field effect transistors (TFETs) with record high ION/IOFF ratio (≫106) for low-voltage (0.5V) operation are achieved by using germanium in the source region to ac...Show More

Abstract:

Tunnel field effect transistors (TFETs) with record high ION/IOFF ratio (≫106) for low-voltage (0.5V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band-to-band tunneling current model. Using the calibrated analytical model, the energy-delay performance of TFET-based technology is compared against that of conventional CMOS technology, at the 65nm node. The TFET is projected to provide dramatic improvement in energy efficiency for performance in the range up to ∼0.5GHz.
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7

ISSN Information:

Conference Location: Kyoto, Japan

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