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The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation | IEEE Conference Publication | IEEE Xplore
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The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation


Abstract:

The trade-off between Tinv scaling and carrier mobility (mu) degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. Ion, compone...Show More

Abstract:

The trade-off between Tinv scaling and carrier mobility (mu) degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. Ion, components are analyzed in terms of NS, vinj and SCE in Lg= 25 nm devices for the first time. As a result, it is clarified that the aggressive Tinv scaling can achieve the performance improvement even if mu degradation occurs in some degree, because mu impact decreases with Lg and Tinv scaling impact becomes strong. Furthermore, we have introduced the effective Tinv scaling (novel SiON) process and demonstrated its excellent device performance (Ion 1 mA/mum @Ioff=100 nA/mum, Lg 25 nm, Vdd=LOV, Avt=1.8 mV mum, Tinv 1.13 nm, without any performance booster technology).
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7

ISSN Information:

Conference Location: Kyoto, Japan

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