Abstract:
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by forming surface nano-structures using an anodic aluminum oxide (AAO) te...Show MoreMetadata
Abstract:
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by forming surface nano-structures using an anodic aluminum oxide (AAO) template as a dry etching mask. Nano-pores were simultaneously formed on indium tin oxide and GaN surfaces of LED with different pore depths by the same procedural steps, with a pore density and pore diameter of 1.1×109/cm2 and 163 plusmn 31 nm, respectively. The nano-patterned LEDs achieved a top-face light output power enhancemetop-face light output power enhancementnt of 72% compared to the conventional LEDs at 20 mA. The light extraction effects of the nano-structures on the trapped optical modes in LED were revealed by scanning electron microscopy and microscopic electroluminescence.
Published in: IEEE Photonics Technology Letters ( Volume: 20, Issue: 23, December 2008)
Institute of Physical Chemistry, Peking University, Beijing, China
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
Institute of Physical Chemistry, Peking University, Beijing, China
Institute of Physical Chemistry, Peking University, Beijing, China
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
Contents Institute of Physical Chemistry, Peking University, Beijing, China
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
Institute of Physical Chemistry, Peking University, Beijing, China
Institute of Physical Chemistry, Peking University, Beijing, China
Peking University, Beijing, Beijing, CN
Peking University, Beijing, Beijing, CN
