Abstract:
The paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to improve device reliability. S/D-tied BG MOSFET not on...Show MoreMetadata
Abstract:
The paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to improve device reliability. S/D-tied BG MOSFET not only effectively reduce the effects of self-heating but also slightly suppress the short-channel effects.
Published in: 2008 26th International Conference on Microelectronics
Date of Conference: 11-14 May 2008
Date Added to IEEE Xplore: 09 July 2008
ISBN Information:
Contents 