Abstract:
Based on new fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions was achieved for t...Show MoreMetadata
Abstract:
Based on new fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions. As application, an analytical formula for the reach-through breakdown voltage of PT- (punch-through) IGBTs, asymmetric thyristors and bipolar transistors with diffused base is presented for the first time.
Published in: 2007 International Semiconductor Conference
Date of Conference: 15 October 2007 - 17 September 2007
Date Added to IEEE Xplore: 14 May 2008
Print ISBN:978-1-4244-0847-4
Contents 