Abstract:
A plasma dry etching process is investigated in this study for fine pattern fabrication of optical or electron devices. The etched depth of CaF2, which depends on the pre...Show MoreMetadata
Abstract:
A plasma dry etching process is investigated in this study for fine pattern fabrication of optical or electron devices. The etched depth of CaF2, which depends on the presence of silicon or magnetic field, increases with increasing RF power. It is found that the etched surface is sufficiently smooth as required for optical device applications.
Published in: 2007 Digest of papers Microprocesses and Nanotechnology
Date of Conference: 05-08 November 2007
Date Added to IEEE Xplore: 25 February 2008
Print ISBN:978-4-9902472-4-9
Contents 