Abstract:
A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma...Show MoreMetadata
Abstract:
A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of silicon substrates capable of producing nanowires and microstructures. The deep vertical etching process consists of sequential oxygen-passivation and SF6-etching of silicon at a record low density plasma of 0.25-0.5W/cm2 (150-300W over an area of 20X30 cm2). A concurrent hydrogenation has been used to stimulate the vertical removal of the silicon substrate without damaging the sidewalls. These nanowires are being used for the fabrication of ultra-small vertical MOSFET transistors provided a sequential doping and etching is used to form the source and drain regions and the gate channel.
Date of Conference: 12-14 December 2007
Date Added to IEEE Xplore: 07 January 2008
ISBN Information:
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