A novel intensity based optical proximity correction algorithm with speedup in lithography simulation | IEEE Conference Publication | IEEE Xplore

A novel intensity based optical proximity correction algorithm with speedup in lithography simulation


Abstract:

It is important to reduce the Optical Proximity Correction (OPC) runtime while maintaining a good result quality. In this paper, we obtain a better formula, which theoret...Show More

Abstract:

It is important to reduce the Optical Proximity Correction (OPC) runtime while maintaining a good result quality. In this paper, we obtain a better formula, which theoretically speeds up the widely used method, Optimal Coherent Approximations (OCA’s), by a factor of 2×. We speed up the OPC algorithm further by making it intensity based (IB-OPC), because it requires much less intensity simulations than the conventional Edge Placement Error (EPE) based OPC algorithms. In addition, the IB-OPC algorithm, which uses the efficiently computed sensitivity information, converges faster than the EPE based OPC. Our IBOPC experimental results show a runtime speedup of up to 15× with a comparable result quality as of the EPE based OPC.
Date of Conference: 04-08 November 2007
Date Added to IEEE Xplore: 10 December 2007
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Conference Location: San Jose, CA, USA
The Department of Electrical and Computer Engineering, University of Texas, Austin, USA
The Department of Electrical and Computer Engineering, University of Texas, Austin, USA

The Department of Electrical and Computer Engineering, University of Texas, Austin, USA
The Department of Electrical and Computer Engineering, University of Texas, Austin, USA
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